Effects of Hydrogen-Only Interrupts on InGaAs/InP Superlattices Grown by OMVPE.(Reannouncement with New Availability Information)

摘要

Superlattices of InGaAs/InP have been grown by OMVPE using short interval H2-onlygrowth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H2 vapor. Possible interface smoothing is seen with H2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is to As carryover into the InP from surrounding solid deposits rather than the transport gases.