Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation.

摘要

The purpose of this research effort was to derive a physics-based dc model for a Heterojunction Bipolar Transistor (HBT). The dc model was then linearized to arrive at a small-signal model that accurately predicts the device's electrical behavior at microwave frequencies. This new model offers features not found in previous analytical or physics-based HBT models such as consideration of a cylindrical emitter-base geometry and is direct implementation into SPICE (Simulation Program with Integrated Circuit Emphasis). The device model parameters were determined from a knowledge of the device material, geometry, and fabrication process. The model was then developed by using semiconductor physics to calculate modified parameters for the existing SPICE bipolar junction transistor (BJT) model. HBT Models, HBT, Heterojunction bipolar transistors, Simulation, Semiconductor devices, SPICE.