Oxygen Based Electron Cyclotron Resonance Etching of Semiconducting HomoepitaxialDiamond Films. (Reannouncement with New Availability Information)

摘要

A new technique for etching boron-doped homoepitaxial diamond films was used tofabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350 degC. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 x 1013cm-3 and 280 cm2/V.s, respectively. The maximum transconductance was 87uS/mm at 200 deg C. Diamond thin films, Field effect transistor, Oxygen etching, Electron cyclotron resonance.