Chemical Contribution of Oxygen to Silicon Carbide Plasma Etching Kinetics in a Distributed Electron Cyclotron Resonance (DECR) Reactor

LANOIS FREDERIC; PLANSON DOMINIQUE; LOCATELLI MARIE-LAURE; LASSAGNE PATRICK; JAUSSAUD CLAUDE; CHANTE JEAN-PIERRE

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Chemical Contribution of Oxygen to Silicon Carbide Plasma Etching Kinetics in a Distributed Electron Cyclotron Resonance (DECR) Reactor

机译：分布式电子回旋共振（DECR）反应器中氧对碳化硅等离子体刻蚀动力学的化学贡献

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来源
《Journal of Electronic Materials 》 |1999年第3期| 共6页
作者
LANOIS FREDERIC; PLANSON DOMINIQUE; LOCATELLI MARIE-LAURE; LASSAGNE PATRICK; JAUSSAUD CLAUDE; CHANTE JEAN-PIERRE;
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正文语种 eng
中图分类材料 ;
关键词
Electron cyclotron resonance(ECR); etching; SiC;

机译：电子回旋共振;蚀刻;SiC;

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1. Chemical Contribution of Oxygen to Silicon Carbide Plasma Etching Kinetics in a Distributed Electron Cyclotron Resonance (DECR) Reactor [J] . LANOIS FREDERIC, PLANSON DOMINIQUE, LOCATELLI MARIE-LAURE, Journal of Electronic Materials . 1999 ,第3期

机译：分布式电子回旋共振（DECR）反应器中氧对碳化硅等离子体刻蚀动力学的化学贡献
2. The role of oxygen in electron cyclotron resonance etching of silicon carbide [J] . J.H. Xia, Rusli, S.F. Choy, Microelectronic Engineering . 2006 ,第1期

机译：氧在碳化硅的电子回旋共振蚀刻中的作用
3. Infrared absorption analysis of organosilicon/oxygen plasmas in a microwave multipolar plasma excited by distributed electron cyclotron resonance [J] . P. Raynaud, C. Marliere, D. Berthomieux, Journal de Physique, IV: Proceedings of International Conference . 1998 ,第7期

机译：分布式电子回旋共振激发的微波多极等离子体中有机硅/氧等离子体的红外吸收分析
4. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma [C] . R. K. Bhardwaj, S. K. Angra, R. P. Bajpai, International Conference on Characterization and Metrology for ULSI Technology . 2005

机译：基于电子的电子快速谐振在CF4 / AR等离子体中的硅的化学辅助等离子体蚀刻
5. Characterization of surface reaction during sulfur hexafluoride etching of silicon in an electron cyclotron resonance (ECR) plasma reactor. [D] . Huang, Yuan-Chang. 1994

机译：在电子回旋共振（ECR）等离子体反应器中对硅进行六氟化硫蚀刻时的表面反应特性。
6. Data on the structure chemical state of silicon carbide synthesized by adiabatic cyclic compression in a chemical reactor [O] . Boris Ezdin, Dmitriy Yatsenko, Valerii Kalyada, 2020

机译：化学反应器中通过绝热循环压缩合成的碳化硅的结构化学状态数据
7. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma [O] . R. K. Bhardwaj 2005

机译：基于电子的电子快速谐振在CF4 / AR等离子体中的硅的化学辅助等离子体蚀刻
8. Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas. [R] . Joseph, J., Hu, Y. Z., Irene, E. A. 1992

机译：电子回旋共振等离子体氧化硅的动力学。

Chemical Contribution of Oxygen to Silicon Carbide Plasma Etching Kinetics in a Distributed Electron Cyclotron Resonance (DECR) Reactor

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