High-Power GaInAsSb-AlGaAsSb Multiple-Quantum-Well Diode Lasers Emitting at 1.9Micrometers

摘要

High-power diode lasers emitting at approximately 1.9 micrometers have beenfabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 micrometers wide and 1000 micrometers long, single-ended output power as high as 1-3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/sq cm for 2000-micrometer-long devices. jg.