High-Power Multiple-Quantum-Well GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.1Micrometers with Low Threshold Current Density. (Reannouncement with New Availability Information)

摘要

The first GaInAsSb/AlGaAsSb diode lasers with a quantum-well active region havebeen demonstrated. These devices, which were grown by beam epitaxy, emit at approx. 2.1 micrometers. For room-temperature pulsed operation of 100 micrometers wide, threshold current density as low as 260 A/sq cm and differential quantum efficiency up to 70 percent have been obtained for lengths of 2000 and 300 micrometers, respectively. One device 100 micrometers wide and 1000 micrometers long has operated pulsed at heatsink temperatures up to 150 degrees C, with a characteristic temperature of 113 K between 20 and 40 degrees C. For another device of the same dimensions, cw output power up to 190 mW/facet has been achieved at a heatsink temperature of 20 degrees C.