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机译:低阈值2.72 / spl mu / m GaInAsSb / AlGaAsSb多量子阱激光器
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany;
quantum well lasers; gallium compounds; gallium arsenide; aluminium compounds; indium compounds; III-V semiconductors; waveguide lasers; ridge waveguides; laser transitions; current density; laser cavity resonators; GalnAsSb/AlGaAsSb multiple-quantum;
机译:高功率GaInAsSb-AlGaAsSb多量子阱二极管激光器,发射功率为1.9 / spl mu / m
机译:低阈值GaInAsSb / AlGaAsSb量子阱脊波导激光器,发射波长2.1μm
机译:长波长GaInAsSb-AlGaAsSb分布式反馈激光器发射2.84 / spl mu / m
机译:GaInAsSb-AlGaAsSb分布式反馈激光器的发射范围为2.4 / spl mu / m
机译:GaInAsSb / AlGaAsSb量子阱异质结构的2.4微米超发光二极管,用于光学葡萄糖传感。
机译:宽带2.4μm超发光GaInAsSb / AlGaAsSb量子阱二极管用于生物分子的光学传感
机译:高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器,具有极低的连续波室温阈值电流 ud
机译:高功率多量子阱GaInassb / alGaassb二极管激光器在2.1micrometers发射,具有低阈值电流密度。 (重新公布新的可用性信息)