Aerosol-Assisted Chemical Vapor Deposition of Copper: A Liquid Delivery Approach to Metal Thin Films.

摘要

Aerosol-Assisted Chemical Vapor Deposition (AACVD) has been used to attain high deposition rates (1000 A/min, up to 800 A/min at 140 deg C) of Cu films at low temperatures (120-200 deg C) from toluene solutions of (hfac)Cu(1,5-COD) in a warm-wall reactor. The films are crystalline and exhibit resistivities close to bulk (1.7-3.5 micro omega cm). Activation energies calculated from the deposition rate as a function of the preheating temperature and the substrate temperature (varying also the nozzle-substrate distance) were 6.8, 8.9 (0.7 cm) and 9.1 (1.7 cm) kcal/mol, respectively.