气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜

摘要

Al-doped ZnO thin films were prepared by aerosol-assisted chemical vapour deposition (AACVD) on glass substrates. The effect of Al content (2at%-8at%) on the structural, optical and electrical properties of Al-doped ZnO thin films was investigated in detail. The samples were tested by XRD, SEM, EDAX and UV-Vis spectrophotometer. The results indicate that the AZO films have a hexagonal (wurtzite) structure without preferential orientation along c-axis, and however no Al related phases are observed. The average transmittances of the AZO film is over 72% in the visible regions. The optical band gap for the AZO films becomes narrow with the increasing Al dopant. The four-point probe technique is used to characterize thin films electrically. The data shows that Al dopant decrease the sheet resistance. The ZnO films doped with 6at% Al exhibit a minimum of sheet resistance (18Ω/□).%采用气溶胶辅助化学气相沉积(AACVD)法在玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜.研究了Al掺杂(2at%～8at%)对ZnO薄膜结构及光电性能的影响.利用XRD、SEM、EDAX、紫外可见分光光度计等手段对样品进行测试.结果表明,制备的所有AZO薄膜均具有纤锌矿结构,不具有沿c轴方向的择优取向,XRD图谱中未观察出Al的相关分相.在可见光范围内,AZO薄膜的平均透过率大于72%,光学禁带宽度随Al掺杂量的增加而变窄.同时根据四探针技术所得的数据得知:Al的掺杂导致薄膜方块电阻的变化,随着A1掺杂量的增加,方块电阻有明显变小的现象,掺杂6at%A1的AZO薄膜具有最低方块电阻(18Ω/□).