Edge Emitting Quantum well Heterostructure Laser Diodes with Auxiliary NativeOxide Vertical Cavity Confinement

摘要

Data are presented on curved-resonator AlGaAs-GaAs quantum well heterostructurelaser diodes employing a deep-oxide guiding structure formed by a combination of impurity-induced layer disordering and native oxidation. Room-temperature, continuous wave (cw) threshold currents as low as approx.13 mA are measured for a approx. 5 micrometer wide, 100 micrometer radius half-ring laser employing a deep-oxide structure. For similar 150 micrometer radius devices, cw threshold currents as low as approx. 19 mA are observed (approx.7 micrometer width), with total output powers exceeding 30 mW. Spectral data indicate single-mode operation over a large current range (25-100 mA). The low-threshold characteristics are attributed to the excellent current and optical confinement of the deep-oxide structure, combined with low edge scattering loss. jg p.2.