Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source

摘要

The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.