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Alternative doping for AlGaInP laser diodes fabricated by impurity- induced layer disordering (IILD)
Alternative doping for AlGaInP laser diodes fabricated by impurity- induced layer disordering (IILD)
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机译:通过杂质感应层无序(IILD)制造的AlGaInP激光二极管的替代掺杂
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摘要
The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.
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