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Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

机译：应变层GaInp / alGaInp激光二极管中的能级对准：压力 - 光致发光实验的模型固体理论分析

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1. Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments [J] . T. M. Ritter, B. A. Weinstein, R. E. Viturro, Physica status solidi, B. Basic research . 1999,第2期

机译：应变层GaInP / AlGaInP激光二极管中的能级对准：压力光致发光实验的模型固体理论分析
2. Low-threshold, strained-layer, GaInP/AlGaInP GRINSCH visible diode lasers [J] . Serreze H.B., Chen Y.C. IEEE Photonics Technology Letters . 1991,第5期

机译：低阈值应变层GaInP / AlGaInP GRINSCH可见二极管激光器
3. Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode [J] . Wataru Susaki, Shinichi Kakuda, Takahiro Igawa, Physica status solidi . 2009,第6期

机译：使用InGaP激光二极管通过光反射确定GaInP / AlGaInP量子阱的能带偏移和子带能级
4. Solid source molecular beam epitaxy growth of GaInP/AlGaInP heterostructures and 600-nm-range quantum well laser diodes [C] . Toivonen, M., Jalonen, Indium Phosphide and Related Materials, 1997., International Conference on . 1997

机译：GaInP / AlGaInP异质结构和600 nm范围量子阱激光二极管的固体源分子束外延生长
5. Continuous-wave Raman laser in hydrogen: Semi-classical theory and diode-pumping experiments. [D] . Meng, Lei Stone. 2002

机译：氢气中的连续波拉曼激光：半经典理论和二极管泵浦实验。
6. In Vitro Mean Red Blood Cell Volume Change Induced by Diode Pump Solid State Low-Level Laser of 405 nm [O] . Mustafa S. Al Musawi, Mohamad Suhaimi Jafar, Bassam T. Al-Gailani, -1

机译：405 nm二极管泵浦固态低能激光诱导的体外平均红细胞体积变化
7. Thermal behavior of visible AlGaInP-GaInP ridge laser diodes [O] . O.J.F. Martin, G.-L. Bona, P. Wolf 1992

机译：可见光GAINP脊激光二极管的热行为

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

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