Structural Characterization of Epitaxial Layers for Infrared Detectors

摘要

UHV/CVD is a growth technique highly suitable for deposition of Ge(x)Si(1-x)heterostructures for long-wavelength infrared detectors. We have used transmission electron microscopy to determine favorable conditions for the growth of these structures. Multiple quantum well structures can be grown with excellent quality without any evidence of nonplanar growth while heterojunction internal photoemission structures incorporated thicker Ge(x)Si(1-x) layers do exhibit nonplanar growth. A modest decrease in growth temperature to 550 deg C is sufficient to solve the problem. jg p.1.