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Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling

机译:用于改进红外探测器建模的HGCDTE外延层的光学吸收研究

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A study of optical absorption in HgCdTe layers is presented to provide an improved model for the absorption coefficient. Measurements were performed on samples grown by molecular beam epitaxy using automated compositional control from spectroscopic ellipsometry measurements. Several samples with varying alloy composition and layer thickness were measured at varying temperatures to build an absorption model to represent bandtail and above bandgap absorption. Best-fit parameters for the optical absorption coefficient model are presented as a function of temperature and composition and are compared to previously published models.
机译:提出了对HGCDTE层中光学吸收的研究,以提供一种用于吸收系数的改进模型。使用来自光谱椭偏测量测量的自动组合物对照通过分子束外延生长的样品进行测量。在不同温度下测量具有不同合金组合物和层厚度的几个样品,以构建吸收模型以表示带状线和高于带隙吸收。用于光学吸收系数模型的最佳拟合参数作为温度和组成的函数,并与先前公布的模型进行了比较。

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