SIMULATION OF THE LATERAL PHOTO EFFECT IN LARGE AREA 1-D A-SI: H P-I-N THIN FILM POSITION SENSITIVE DETECTORS

摘要

The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) through an analytical model. The experimental data recorded in I -D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.