Interpretation of the static and dynamic characteristics of 1-D thin film position sensitive detectors based on a-Si:H p-i-n diodes

摘要

In this work, we present a model to interpret the steady-state and the dynamic detection limits of 1-D Thin Film Position Sensitive Detectors (1-D TFPSD) based on p-i-n a-Si:H devices. From this, an equivalent electric circuit is derived and the predicted values are compared with the experimental results obtained in 1-D TFPSD devices, with different sizes. The model is also able to determine the device characteristics that influence the spatial limits and the response time of the device.