Plasma Deposition of Wide Gap, Highly Photoconductive a-Si:H Thin Films from Disilane-Helium Mixtures

摘要

Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a uhv system from Si sub 2 H sub 6 -He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH sub 4 , Si sub 2 H sub 6 -produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10 exp 7 . (ERA citation 10:010131)