3-D numerical modeling and simulation of nanoscale FinFET for the application in ULSI circuits

摘要

A complete three-dimensional numerical modeling of nanoscale FinFET including quantum-mechanical effects for the application in future ULSI circuits has been developed. The exact potential profile in the channel has been computed by obtaining a self-consistent solution of 3D PoissonSchr?dinger equation using Leibmanns iteration method. The threshold voltage shift, drain and transfer characteristics have been estimated and the results were compared with the device simulator and experimental results. The model is purely a physics based one and overcomes the major limitations of the existing 2D/3D analytical models by providing a more accurate result and this model is validated by comparing with the existing results as well as the experimental results.