首页> 外文期刊>Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties >Electron channelling contrast imaging characterization of dislocation structures associated with extrusion and intrusion systems and fatigue cracks in copper single crystals
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Electron channelling contrast imaging characterization of dislocation structures associated with extrusion and intrusion systems and fatigue cracks in copper single crystals

机译:电子通道对比成像表征与单晶和挤压系统有关的位错结构以及铜单晶中的疲劳裂纹

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The fatigue of copper single crystals, oriented for single slip, was studied using electron channelling contrast imaging (ECCI) in a scanning electron microscope. This technique allows the detection and characterization of dislocation structures in bulk specimens. This paper presents ECCI images showing dislocation arrangements associated with intrusions, extrusions and stage I and stage II cracks in single-crystal copper samples fatigued by tension-compression along [541]. The presence of intrusions or stage I cracks on the persistent slip band (PSB) planes caused no noticeable change in the local dislocation structures in the matrix vein and PSB ladder structures. Stage II cracks deviate from the PSB planes and were associated with elongated dislocation cells inclined in the direction of the loading axis. These elongated dislocation cells are confirmed to within 10 mum of the crack tip. [References: 20]
机译:在扫描电子显微镜中使用电子通道对比度成像(ECCI)研究了定向于单滑动的铜单晶的疲劳。这项技术可以检测和表征大块试样中的位错结构。本文给出了ECCI图像,显示了由拉伸压缩沿[541]疲劳的单晶铜样品中与侵入,挤压以及第一和第二阶段裂纹相关的位错排列。永久滑移带(PSB)平面上存在侵入或第I阶段裂缝,不会导致基质静脉和PSB阶梯结构中的局部位错结构发生明显变化。第二阶段裂纹偏离PSB平面,并与沿加载轴方向倾斜的细长位错单元相关。这些细长的位错单元被确认在裂纹尖端的10毫米内。 [参考:20]

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