Current transport properties of Pd/3C–SiC Schottky junctions with planar and vertical structures

摘要

Palladium Schottky contacts were fabricated on 3C–SiC heteroepitaxial layers (grown on Si substrates) and characterized by current–voltage measurements. The effects of epitaxial layer thickness and the device configuration on the diode parameters were investigated and analyzed in terms of the interfacial defect density. The influence of operating temperature on the I–V characteristics of the Schottky junctions were studied and the apparent anomalies in temperature dependence of barrier height and ideality factor were explained with the model of localized inhomogeneities of barrier height over the Schottky contact region.