Faculty of Engineering, Environment and Computing, Coventry University, Coventry, UK;
Faculty of Engineering, Environment and Computing, Coventry University, Coventry, UK;
Faculty of Engineering, Environment and Computing, Coventry University, Coventry, UK;
Faculty of Engineering, Environment and Computing, Coventry University, Coventry, UK;
Department of Electrical and Electronic Engineering, University of Warwick, Coventry, UK;
Department of Engineering, University of Cambridge, Cambridge, UK;
Silicon; Schottky barriers; Silicon carbide; Schottky diodes; Tunneling; Computational modeling; Electron traps;
机译:Au / Sn02-PVA / n-Si肖特基势垒二极管中与温度有关的电流传输机制和势垒不均匀性
机译:具有完全凹陷的肖特基阳极的AlGaN / GaN肖特基势垒二极管的电流传输机制
机译:Au |电导深层瞬态光谱和电流运输机制,Pt | N-GaN肖特基屏障二极管
机译:载波传输机制有助于3C-SiC-on-Si-Schottky屏障二极管中的子阈值电流
机译:肖特基障碍二极管中的少数载体注入(存储延迟,电导率调制)。
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:(Ni / Au)-AlN / GaN肖特基势垒二极管中的电流传输机制和陷阱态研究
机译:低阻隔肖特基二极管电流关系的研究