Performance Improvement for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

摘要

In this work, the relation between post annealing temperature and electrical characteristic on high mobility a-IZTO TFTs was investigated. The 400℃-annealed a-IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm~2/Vs, V_(th) of -2.8 V and sub-threshold swing of 0.25 V/decade. Both shallow trap states of a-IZTO film and interface trap states at the a-IZTO/SiO_2 interface decreased to 2.16 × 10~(17) cm~(-3) eV~(-1) and 4.38 × 10~(12) cm~(-2) eV~(-1), respectively with 400℃ annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a-IZTO TFTs.