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Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

机译：使用氧化铝覆盖层的最佳厚度的高迁移率铟 - 镓 - 氧化铟膜薄膜晶体管的电性能和稳定性改进

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Hyun-Seok Cha; Hwan-Seok Jeong; Seong-Hyun Hwang; Dong-Ho Lee; Hyuck-In Kwon;
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年度 2020
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1. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer [J] . Jian Li-Yi, Lee Hsin-Ying, Lin Yung-Hao, Journal of Electronic Materials . 2018,第2期

机译：使用Al2O3阻挡层改善铟镓锌氧化铝薄膜晶体管的自加热
2. The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer [J] . Wang Cheng-Jyun, You Hsin-Chiang, Ko Fu-Hsiang Microelectronic Engineering . 2017,第juna期

机译：通过钝化层提高稳定性的基于铟锌氧化物的薄膜晶体管的高电性能
3. Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor [J] . Yunyong Nam, Hee-Ok Kim, Sung Haeng Cho, Journal of Information Display . 2016,第2期

机译：通过原子层沉积法沉积的氧化铝中氢对铟镓锌氧化物薄膜晶体管电性能的有益影响
4. Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness [C] . Yang Shao, Hongjuan Lu, Xiaoliang Zhou, IEEE International Conference on Electron Devices and Solid State Circuits . 2018

机译：双栅极铟镓镓锌氧化物薄膜晶体管中的动态阈值电压调制：有源层厚度的影响
5. Fabrication and characterization of zinc oxide light-emitting diodes, indium zinc oxide thin-film transistors, and aluminum gallium nitride/gallium nitride high electron mobility transistor-based biosensors. [D] . Wang, Yu-Lin. 2009

机译：氧化锌发光二极管，氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors [O] . Dae-Hwan Kim, Hyun-Seok Cha, Hwan-Seok Jeong, 2021

机译：有源层厚度对高迁移率非晶铟 - 镓 - 氧化钛薄膜晶体管的电特性及稳定性的影响

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

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