MANUFACTURE OF HIGH-MOBILITY THIN-FILM TRANSISTOR AND PLURALITY OF HIGH-MOBILITY THIN-FILM TRANSISTORS

摘要

PURPOSE: To obtain a high-resolution active matrix display with a display driver that can be operated within a several MHz frequency range, for example, by forming a plurality of islands made of a light-shading layer, a barrier layer, a gate dielectric, and epitaxial Si on a glass substrate. CONSTITUTION: SiO2 layer is grown on a Si substrate 12, and SiO2 layer is etched to obtain a plurality of SiO2 gate dielectric regions 18, and epitaxial Si layer 20 is grown on them. Then, a barrier layer 22 and a light-shading layer 24 are adhered, a glass substrate 14 is bonded on it, and the Si substrate 12 is eliminated by etching. Then, one portion of the epitaxial Si layer 20 and one portion of the gate dielectric region 18 are etched to form a plurality of islands 26 with the epitaxial Si layer 20 that contains the gate dielectric regions 18, the barrier layer 22 and the light-shading layer 24, and a glass layer is adhered. After that, a TFT is formed at each island 26.