METHOD AND APPARATUS OF EXTRACTING MOBILITY OF AMORPHOUS SEMICONDUCTOR THIN-FILM TRANSISTOR

摘要

Disclosed are a method and an apparatus of extracting the mobility of an amorphous semiconductor thin-film transistor. The apparatus of extracting the mobility of an amorphous semiconductor thin film transistor according to an embodiment of the present invention includes a step of obtaining a state density in the bandgap of a thin film transistor; a step of calculating the first mobility of the thin film transistor for a lower voltage region than a threshold voltage by using the extracted state density; a step of calculating the second mobility of the thin film transistor for a higher voltage region than the threshold voltage by comparing the predetermined mathematical model of measurement data according to the gate voltage and the measurement data according to the measure gate voltage of the thin film transistor; and a step of extracting the mobility of the thin-film transistor by using the calculated first and the second mobility.