Two dimensional current simulation of amorphous silicon thin-film transistors with extracted density of states by C-V characteristics and mobility measurement

摘要

The density of states (DOS) of amorphous silicon (a-Si) was extracted by multifrequency Capacitance-Voltage (C-V) characteristics and mobility measurement and applied to two dimensional TCAD simulation. It is well known that the DOS definitely influences current characteristics of TFT devices [1]. Thus, DOS distribution should be primarily considered on TFT characteristics simulation. In order to validate extracted DOS, the simulation results were compared to experimental data.