A numerical model for two-dimensional transient simulation of amorphous silicon thin-film transistors

摘要

A model based on a linearized solution of the Shockley-Read-Hall trapping expressions is presented. It allows these equations to be eliminated from the system matrix. This results in significantly reduced memory requirements and execution times. To illustrate the approach, the switch-on and switch-off transients of a thin-film transistor were simulated. These results are compared with ones obtained from the full two-dimensional transient numerical model. It is shown that the linearized model can simulate a wide variety of device behavior, providing close agreement with the full model at a fraction of the cost.