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Comparison of Etched-Geometry and Overgrown Silicon Permeable Base Transistors by Two-Dimensional Numerical Simulations

机译：用二维数值模拟比较蚀刻几何和过度生长的硅透过性基极晶体管

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Vojak, B. A.; Alley, G. D.;
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年度 1983
页码 p.1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Mathematical models; Bases(Transistors); Numerical analysis; Two dimensional; Bias; Comparison; Silicon; Permeability; Etching; Geometry; High frequency; Reprints;

机译：数学模型;基底（晶体管）;数值分析;二维;偏差;比较;硅;渗透性;蚀刻;几何;高频;重印;

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专利

1. Application of MBE-grown epitaxial Si/CoSi/sub 2//Si heterostructures for overgrown silicon permeable-base transistors [J] . Gruhle A., Beneking H. IEEE Transactions on Electron Devices . 1991,第8期

机译：MBE生长的外延Si / CoSi / sub 2 // Si异质结构在过度生长的硅渗透基晶体管中的应用
2. A numerical model for two-dimensional transient simulation of amorphous silicon thin-film transistors [J] . McMacken J.R.F., Chamberlain S.G. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 1992,第5期

机译：非晶硅薄膜晶体管二维瞬态仿真的数值模型
3. Two-dimensional analysis of the breakdown mechanism in the etched-groove silicon permeable base transistor [J] . Mouis M. IEEE Transactions on Electron Devices . 1992,第7期

机译：刻蚀硅可穿透基极晶体管击穿机理的二维分析
4. Frequency performances of MOS compatible silicon permeable base transistors and comparison with simulation results [C] . Mouis M., Letourneau P., Vincent G. ESSDERC 90 : 20th European solid state device research conference . 1990

机译：MOS兼容的硅可渗透基极晶体管的频率性能以及与仿真结果的比较
5. Capacitance-voltage characteristics and two-dimensional numerical analysis of hydrogenated amorphous silicon thin film transistors [D] . Choi, Jong Sun 1992

机译：氢化非晶硅薄膜晶体管的电容电压特性及二维数值分析
6. Two-Dimensional Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors with Differential Structure [O] . Xianghong Yang, Xiaofeng Zhao, Yunjia Bai, 2017

机译：基于差分结构硅磁敏晶体管的二维磁场传感器
7. Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology [O] . A. Boukhenoufa, L. Pichon, C. Cordier 2007

机译：薄膜晶体管GR机制的二维数值模拟1 / f噪声：诱导缺陷技术的影响

Comparison of Etched-Geometry and Overgrown Silicon Permeable Base Transistors by Two-Dimensional Numerical Simulations

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