Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

摘要

Indium-antimonide quantum dots (7-9 x 10(9) cm(2)) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440A degrees C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.