首页> 外国专利> SURFACE TREATED QUANTUM DOT SURFACE TREATING METHOD FOR QUANTUM DOT QUANTUM DOT LIGHT EMITTING DIODE INCLUDING THE SAME SURFACE TREATED QUANTUM DOT AND METHOD FOR MANUFACTURING THE SAME QUANTUM DOT LIGHT EMITTING DIODE

SURFACE TREATED QUANTUM DOT SURFACE TREATING METHOD FOR QUANTUM DOT QUANTUM DOT LIGHT EMITTING DIODE INCLUDING THE SAME SURFACE TREATED QUANTUM DOT AND METHOD FOR MANUFACTURING THE SAME QUANTUM DOT LIGHT EMITTING DIODE

机译:处理量子点的发光二极管的表面处理量子点包括相同表面处理量子点的发光二极管的制造方法和制造相同量子点发光二极管的方法

摘要

In order to overcome the above-mentioned limitations, perovskite is used as a photoactive material as a single material, and a quantum dot of a perovskite structure is formed, and the surface of such a quantum dot is treated with an organic ligand to realize a quantum dot light emitting diode do.
机译:为了克服上述限制,将钙钛矿用作光敏材料作为单一材料,并形成钙钛矿结构的量子点,并用有机配体处理该量子点的表面以实现光致发光。量子点发光二极管呢。

著录项

  • 公开/公告号KR20170114656A

    专利类型

  • 公开/公告日2017-10-16

    原文格式PDF

  • 申请/专利权人 울산과학기술원;

    申请/专利号KR20160041999

  • 发明设计人 박종남;서요한;김태윤;

    申请日2016-04-06

  • 分类号C09K11/02;C09K11/08;H01L33;H01L33/06;H01L33/44;

  • 国家 KR

  • 入库时间 2022-08-21 13:26:28

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号