METHOD OF FABRICATING QUANTUM DOT SILICATE LAYER FOR LIGHT-EMITTING DEVICE TO INCREASE DENSITY OF QUANTUM DOTS WITHIN THIN FILM BY REPLACING SUBSTRATE SURFACE INCLUDING QUANTUM DOTS WITH PREDETERMINED MATERIAL HAVING SOL-GEL REACTIVE GROUP AND FORMING THIN FILM THEREON

摘要

PURPOSE: A method of fabricating quantum dot silicate layer for a light-emitting device is provided to increase density of quantum dots within a thin film by replacing a substrate surface including quantum dots with a predetermined material having a sol-gel reactive group and forming the thin film thereon. CONSTITUTION: A substrate surface including semiconductor quantum dots of 1-100nm fabricated by a wet method is replaced with a silane compound having a functional group of a phosphine series, an amine series, or a thiol series and a sol-gel reactive group. A sol-gel reaction process for the replaced quantum dots is performed and the sol-gel reacted quantum dots are coated on a substrate. A sol-gel reaction process is performed and a heat treatment is performed.