Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

摘要

We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control lnAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 x 10(10) cm(-2) at 4 monolayers InAs layer. (C) 2001 Elsevier Science Ltd. All rights reserved. [References: 5]