Evaluation of the Effective Threshold Energy of the Interband Impact Ionization in a Deep-Submicron Silicon n-Channel MOS Transistor

摘要

Using the ensemble Monte Carlo method allowing for the main features of charge-carrier transport in conditions of strong electric fields, a deep-submicron silicon n-channel MOS transistor with a channel length of 50 nm is simulated. In the Keldysh impact ionization model with a soft threshold in a channel of the simulated transistor, the effective threshold energy of this process is calculated.