Z2FET FIELD EFFECT TRANSISTOR WITH SLOPE UNDER THE VERTICAL THRESHOLD AND WITHOUT IMPACT IONIZATION

摘要

The transistor comprises first and second source / drain electrodes (2, 3) formed in a semiconductor film (4) by respective N and P doped zones. A bias is applied between the two source / drain electrodes (2, 3). ) to impose on the p-type doped electrode a potential greater than that of the N-type doped electrode. The transistor comprises first and second potential-barrier generating devices (Q, R) in the semiconductor film (4). The two potential barriers (Q, R) oppose the passage of the charge carriers emitted respectively by the first and second source / drain electrodes (2, 3). The two potential barriers (Q, R) are shifted along an axis (X) connecting the two source / drain electrodes (2, 3). One of the potential barrier generation devices is configured to generate a modulable amplitude potential barrier and is electrically connected to the gate (1).