New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

摘要

This work presents a selective ultraviolet ( UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography ( LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy ( MBE) growth of InAs results in ordered InAs/GaAs quantum dot ( QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.