Strain-induced effects on optical properties of magnetized Stranski-Krastanov quantum dots

摘要

The optical properties of semiconductor quantum dots are strongly affected by the strain arising due to lattice mismatch of the substrate and deposited material. Hole energy eigenvalues of a strained quantum dot have been calculated and included subsequently in the analytical study of the optical properties of the system in the presence of a moderately strong magnetic field. The anisotropic quantum dot is modelled by assuming a parabolic confinement potential. The analyses are based on a 4 X 4 k centre dot p Hamiltonian model that includes the strain-induced effects. The wavefunctions obtained by solving the eigenvalue equations are used to calculate the dipole matrix elements of the transition between valence band and conduction band. It is observed that, in the presence of strain, the optical properties of the quantum dot are altered significantly since the strain field changes the electronic structure of the quantum dot.