METHOD FOR MANUFACTURING A QUANTUM DOT USING A PATTERNED STRAINED LAYER AND QUANTUM DOT SEMICONDUCTOR DEVICE MADE BY THE SAME CAPABLE OF IMPROVING AN OPTICAL GAIN AND A TEMPERATURE PROPERTY

摘要

PURPOSE: A method for manufacturing a quantum dot using a patterned strained layer and a quantum dot semiconductor device made by the same are provided to form the quantum dot with high uniformity and density by using the patterned strained layer as a seed layer.;CONSTITUTION: A patterned strained layer(530a) and a patterned first capping layer(550a) are formed on a substrate(510) by patterning the first capping layer and the strained layer using an etching mask. A second capping layer(570) is formed after the first capping layer and the strained layer are patterned with a lattice format. A quantum dot forming material is formed on the upper side of the second capping layer. A plurality of self-formed quantum dots(590a) are formed on the upper side of the second capping layer.;COPYRIGHT KIPO 2011