Improved optical properties of strain-induced quantum dots self-formed in GaP/InP short period superlattices

摘要

Quantum dots (QDs) structures are self-formed by the growth of (GaP)/sub n/(InP)/sub m/ short-period superlattices (SLs) sandwiched with InGaP barrier layers on GaAs(N11)A (N=2-5) substrates. Their lateral density is as high as 10/sup 11/-10/sup 12/ cm/sup -2/. Optical properties of multilayer quantum dots (MQDs)/InGaP multilayer structures are investigated by changing SL period (P) and InGaP barrier thickness (B). By decreasing P and B, PL peak broadening with temperature is much reduced. The multilayer quantum dots light emitting diode (MQDs-LED) shows excellent electroluminescence (EL) properties.