Features of the Formation of Porous Alumina Mask for Local Plasma Etching of Semiconductors

A. N. Belov; S. A. Gavrilov; Yu. A. Demidov; V. I. Shevyakov

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Features of the Formation of Porous Alumina Mask for Local Plasma Etching of Semiconductors

机译：半导体局部等离子刻蚀多孔氧化铝掩模的形成特征

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The features of formation of porous alumina masks for silicon nanoprofiling were investigated.The influence of micromorphology on the property of the local etching of silicon on the interface of an anodized double-layer structure of Al–Ti was shown. The correlation between the aspect ratio of alumina pores and the geometrical parameters of the porous silicon was investigated.

机译：研究了用于硅纳米轮廓分析的多孔氧化铝掩模的形成特征。显示了微观形貌对阳极氧化铝双层结构界面上硅局部刻蚀特性的影响。研究了氧化铝孔的长径比与多孔硅的几何参数之间的相关性。

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《Nanotechnologies in Russia 》 |2011年第12期| 共6页
作者
A. N. Belov; S. A. Gavrilov; Yu. A. Demidov; V. I. Shevyakov;
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正文语种 eng
中图分类数理科学和化学 ;
关键词
features; formation; porous;

机译：特征;形成;多孔;

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1. Features of the Formation of Porous Alumina Mask for Local Plasma Etching of Semiconductors [J] . A. N. Belov, S. A. Gavrilov, Yu. A. Demidov, Nanotechnologies in Russia . 2011 ,第11a12期

机译：半导体局部等离子刻蚀多孔氧化铝掩模的形成特征
2. Optimized plasma-polymerized fluoropolymer mask for local porous silicon formation [J] . Bin Lu, Thomas Defforge, Balint Fodor, Journal of Applied Physics . 2016 ,第21期

机译：优化的等离子体聚合含氟聚合物掩膜，用于局部形成多孔硅
3. Large-Scale Preparation of Uniform Nanopatterned Silicon Substrates by Inductively Coupled Plasma Etching Using Self-Assembled Anodic Alumina Masks [J] . Tian Ji-Li, Wang Gui-Gen, Zhang Hua-Yu, ECS Journal of Solid State Science and Technology . 2016 ,第6期

机译：使用自组装阳极氧化铝掩模通过电感耦合等离子体蚀刻大规模制备均匀的纳米图形硅衬底
4. Features of luminescent semiconductor nanowire array formation by electrodeposition into porous alumina [C] . S. A. Gavrilov, D. A. Kravtchenko, A. I. Belogorokhov, Conference on Physics, Chemistry and Application of Nanostructures . 2001

机译：电沉积成多孔氧化铝的发光半导体纳米线阵列形成的特征
5. Radiation transport in low pressure plasmas: Lighting and semiconductor etching plasmas. [D] . Rajaraman, Kapil. 2005

机译：低压等离子体中的辐射传输：照明和半导体蚀刻等离子体。
6. Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask [O] . Violetta Gianneta, Antonis Olziersky, Androula G Nassiopoulou 2013

机译：通过片上自组装多孔阳极氧化铝掩模通过反应离子刻蚀进行Si纳米图案化
7. Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask [O] . Violetta Gianneta, Antonis Olziersky, Androula G Nassiopoulou 2013

机译：通过片上自组装多孔阳极氧化铝掩模通过反应离子刻蚀进行Si纳米图案化
8. Plasma and Ion Etching for Failure Analysis. Part 2. The Etching of Plastic Encapsulant and Other Semiconductor Device Materials, Using the Technics Giga Etch 100-E Plasma Etch System [R] . Hardman, M., Mapper, D., Farren, J., 1986

机译：等离子体和离子蚀刻用于失效分析。第2部分。使用Technics Giga Etch 100-E等离子蚀刻系统对塑料封装和其他半导体器件材料进行蚀刻

Features of the Formation of Porous Alumina Mask for Local Plasma Etching of Semiconductors

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