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Local hetero-contact producing device for high-power solar cell, has surface passivated-layer of semiconductor material formed by plasma etching, where foil serves as masking for separation processes of hetero contacts
Local hetero-contact producing device for high-power solar cell, has surface passivated-layer of semiconductor material formed by plasma etching, where foil serves as masking for separation processes of hetero contacts
The device has a surface passivated-layer of a semiconductor material formed by plasma etching through openings (45) of a stretched foil (7). The stretched foil serves as a masking for separation processes of hetero contacts, transparent conductive oxide or metals and/or plasma processes. A contact region is exposed to hydrogen plasma after the formation of the layer and is heated to a temperature between 300 [deg] C and 600 [deg] C. An independent claim is also included for a method for producing a local-hetero contact.
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