Additive soft-lithographic patterning of submicrometer- and nanometer-scale large-area resists on electronic materials

摘要

We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale (similar to 100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO2-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.