Resist underlayer film forming method, pattern forming method, and compositions, resist underlayer film forming material for additives, crosslinking agent and resist underlayer film

摘要

PROBLEM TO BE SOLVED: To provide a resist underlayer film-forming method capable of forming a resist underlayer film that has a function as an antireflective film and that is excellent in pattern transfer performance and etching resistance, to provide an underlayer film that does not bend in micronized pattern transfer and a method of forming the underlayer; and also to provide a pattern forming method.;SOLUTION: The resist underlayer film is formed of a composition containing (A) a resin containing an aromatic ring and (B) a compound expressed by general formula (i).;COPYRIGHT: (C)2011,JPO&INPIT