Direct Patterning of Nanoscale Cu_2O Resistive Material for Soft Nanoelectronics

摘要

We demonstrate a simple direct nanoimprint lithography method of fabricating a copper oxide memory device for soft nanoefectronics. The process was done at room temperature with low pressure, so that a CU_2O resistive nanoarray could be fabricated not only on the Si substrate but also on the flexible polyimide substrate. The resistive switching of the fabricated 200 nm CU_2O nanopillar was observed at 2 V with a low current compliance of 5 μA from a high-resistance state to a low-resistance state, and the reversible switching was done with a fast switching time of 10 ns and high endurance.