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LTCC-BASED VERTICAL VIA INTERCONNECTS FOR RF MEMS PACKAGING

机译:基于LTCC的垂直VIA互连,用于RF MEMS包装

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摘要

This article reports on a low temperature cofired ceramic (LTCC)-based RF MEMS packaging and its electrical modeling using lumped elements and microstrip lines. An LTCC cap with vertical vias was flip-chip bonded with a glass substrate, where a coplanar waveguide (CPW) formed to measure the RF characteristics of packaging structure. We measured return loss (S_(11)) and insertion loss (S_(21)) of the fabricated packaging structure in a frequency range of 1 to 30 GHz. The parameters of two different equivalent circuits using lumped elements and physical microstrip lines were extracted from the measured results. The mean absolute errors (MAEs) were calculated to show the agreement between measured properties and electrical equivalent circuits. The calculated MAEs were 0.591 dB (S_(11)) and 0.146 dB (S_(21)) for lumped elements, and 0.926 dB (S_(11)) and 0.179 dB (S_(21)) for microstrip lines, respectively.
机译:本文报道了基于低温共烧陶瓷(LTCC)的RF MEMS封装及其使用集总元件和微带线的电气建模。将带有垂直通孔的LTCC盖与玻璃基板倒装芯片结合,在玻璃基板上形成共面波导(CPW)以测量封装结构的RF特性。我们在1至30 GHz的频率范围内测量了所制造包装结构的回波损耗(S_(11))和插入损耗(S_(21))。从测量结果中提取了使用集总元件和物理微带线的两个不同等效电路的参数。计算出平均绝对误差(MAE),以显示测量的特性和等效电路之间的一致性。对于集总元件,计算的MAE分别为0.591 dB(S_(11))和0.146 dB(S_(21)),对于微带线分别为0.926 dB(S_(11))和0.179 dB(S_(21))。

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