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Laser decapsulation of molding compound from wafer level chip size package for solder reflowing

机译:从晶圆级芯片尺寸封装中对模塑化合物进行激光解封,以实现回流焊

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A potential laser etching method has been investigated and implemented in decapsulating wafer level chip size package (WLCSP). A chemically and physically clean surface could be obtained and lead to successful solder reflowing. Firstly, fast and cost-saving transfer molding was suggested to replace underfill dispensing in encapsulation. An industrial-grade KrF excimer laser was utilized to remove the compressed molding compound (epoxy resin and silica fillers) on Au/Cu or Pb-Sn/Cu bumps. An oblique angle of incidence was found effective in achieving a filler-free and chemically clean surface. Explosion forces from epoxy underneath the fillers, together with the transient thermal expansion of whole substrate, were attributed to the higher filler removal efficiency than at normal incidence. In addition, etching rates at angular irradiation were found more balanced between the surrounding areas and the bump. Helium, in comparison with oxygen, helped to reduce polymer molecules left over the bump top. In higher laser fluence or oxygen environment, carbonyl groups with stronger bonds to metal surface (bump) were found on bump top so that success rate of solder reflowing was greatly lowered. A success rate higher than 80% was achieved at an optimal laser fluence and scanning strategy, with inert gas assistance. (c) 2004 Elsevier Ltd. All rights reserved.
机译:在封装晶圆级芯片尺寸封装(WLCSP)的过程中,已经研究并实现了一种潜在的激光蚀刻方法。可获得化学和物理清洁的表面,并导致成功的焊料回流。首先,建议使用快速且节省成本的传递模塑代替封装中的底部填充胶。利用工业级KrF准分子激光器去除Au / Cu或Pb-Sn / Cu凸块上的压缩模塑料(环氧树脂和二氧化硅填料)。发现倾斜的入射角对于获得无填料和化学清洁的表面是有效的。填料下方的环氧树脂产生的爆炸力,以及整个基材的瞬态热膨胀,归因于比正常情况下更高的填料去除效率。另外,发现在角照射下的蚀刻速率在周围区域和凸块之间更加平衡。与氧气相比,氦气有助于减少残留在凸块顶部的聚合物分子。在较高的激光通量或氧气环境中,在凸块顶部发现与金属表面(凸块)具有更强键合的羰基,从而大大降低了焊料回流的成功率。在惰性气体辅助下,采用最佳的激光注量和扫描策略,成功率达到80%以上。 (c)2004 Elsevier Ltd.保留所有权利。

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