Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD

摘要

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 °C for micro/ nanoelectromechanical system (M/NEMS) applications,in which hexamethyldisilane (HMDS,Si2(CH3)6) was used as a safe organosilane single-source precursor.The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm.The HMDS flow rate was important in obtaing a mirror-like crystalline surface.The growth rate of the 3C-SiC film in this work was 4.3 mu m/h.A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD),transmission electron microscopy (TEM),reflection high energy electron diffraction (RHEED),atomic force microscopy (AFM),X-ray photoelectron spectroscopy (XPS) and Raman scattering,respectively.These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers.The 3C-SiC film had a very good crystal quality without twins,defects or dislocations,and a very low residual stress.