Rapid Thermal Annealing of Sputtered Silicon-Rich Oxide/SiO_2 Superlattice Structure

摘要

Silicon-rich oxide/silicon dioxide (SiO_x/SiO_2), x = 1.2, superlattice thin films, deposited by the radio-frequency magnetron-sputtering technique, was rapid thermal annealed at temperatures ranging from 500 to 1000__. The photoluminescence (PL) spectra of samples after rapid thermal annealing (RTA) at 1000__ consists of oxygen-deficiency-related PL bands around __400 and __515 nm, and silicon (Si) nanocrystal-related PL bands around __768 nm. Absorption bands at 364 nm (3.41 eV) and 302 nm (4.1 eV) are considered to be related to Si nanocrystals. On the basis of PL and PL excitation spectra, an energy-band diagram of a RTA-treated SiO_x/SiO_2 superlattice sample was constructed.