Low Temperature Nafion Bonding of Silicon Wafers

摘要

Silicon wafer bonding using intermediatesubmicrometer Nafion layers was investigated with emphasis inthe low temperature region. Bonding was achieved by heatingNafion-coated wafer pairs. Infrared images revealed voids atannealing temperatures of less than 75℃. In the transition regionbetween 75 and 120℃ void-free bonds were achieved; however,the Nafion was chemically unstable. Chemically stable Nafionbond formation can be accomplished at annealing temperatures in excess of 120℃.