首页> 外文期刊>Tamkang Journal of Science and Engineering >Single-crystalline Silicon on Quartz (SOQ) Wafer by Ultra-low Temperature (100℃) Wafer Bonding and Thinning Approaches
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Single-crystalline Silicon on Quartz (SOQ) Wafer by Ultra-low Temperature (100℃) Wafer Bonding and Thinning Approaches

机译:石英(SOQ)晶片上的单晶硅通过超低温(100℃)晶片键合和减薄方法

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摘要

Single-crystalline silicon films have been prepared on synthetic quartz (fused quartz or quartz glass) substrates by ultra-low temperature wafer bonding and thinning approaches. The wafer surfaces treated only by RCA1 process showed a relative low initial bonding energy of 0.17 J/m~2. Though the bonding strength can be raised to 14 J/m~2 after 350℃ annealing for 4 h, the severe warpage of bonded wafer led to the poor total thickness variation (TTV) of SOQ wafers (TTV > 10 μm) after thinning. However, if the wafer surfaces treated with RCA1 process, and followed by O_2 plasma treatment for 15 sec, the initial bonding energy can be raised to 0.83 J/m~2. After the bonded wafer annealed at 100℃ for 16 hrs, the bonding strength increased rapidly to 13.3 J/m~2 with still a low warpage of 2.5 μm. The SOQ wafers fabricated by the ultra-low temperature bonding, lapping and polishing showed relative good TTV of less than 4 μm.
机译:已经通过超低温晶片键合和薄化方法在合成石英(熔融石英或石英玻璃)基板上制备了单晶硅膜。仅通过RCA1工艺处理的晶片表面显示出相对较低的初始结合能,为0.17 J / m〜2。尽管在350℃退火4 h后可以将键合强度提高到14 J / m〜2,但是键合晶片的严重翘曲导致减薄后SOQ晶片的总厚度变化(TTV)较差(TTV> 10μm)。但是,如果用RCA1工艺处理晶片表面,然后进行O_2等离子体处理15秒钟,则初始结合能可以提高到0.83 J / m〜2。贴合的晶片在100℃退火16小时后,贴合强度迅速提高至13.3 J / m〜2,仍具有2.5μm的低翘曲度。通过超低温粘合,研磨和抛光制成的SOQ晶片显示出小于4μm的相对较好的TTV。

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